Dry cleaning apparatus

ABSTRACT

There is disclosed a dry cleaning technology in which the particles left on the surface of the ultra-fine structure such as a semiconductor device and the like can be cleaned and removed totally in a vacuum environment without being dependent on a wet cleaning method performed in the surrounding atmosphere. In the dry cleaning device of the present invention, the pad is approached to the surface of the wafer such as a semiconductor wafer and the like, cleaning gas is injected into a fine clearance formed between both members to generate a high-speed gas flow along the surface of the wafer and the particles left on the surface of the wafer are physically cleaned and removed with the high-speed gas flow. In addition, in order to assist this physical cleaning action, either a chemical or an electrical cleaning method such as a plasma or the like can be used together. In accordance with the dry cleaning apparatus of the present invention, it is possible to attain a superior cleaning effect corresponding to the prior art wet cleaning method while the wafer is not exposed in the surrounding atmosphere.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] This invention relates to a wafer cleaning apparatus in a manufacturing stage for a semiconductor device, and more particularly a technology for removing particles left on the wafer surface within a vacuum environment after processing with plasma or after flattening with plasma at a pre-stage of the semiconductor manufacturing process.

[0003] 2. Description of the Related Prior Art

[0004] In the prior art cleaning for a semiconductor wafer (hereinafter abbreviated as a wafer), this cleaning operation is carried out such that either pure water or solution diluted with various kinds of acids or alkaline solution is applied, the wafer is immersed in the solution or the solution is blown against the wafer to wash away the particles at the surface of the wafer. In addition, a method for mechanically cleaning the wafer surface with a brush in concurrent with immersion of wafer in the solution or the like is also used.

[0005] The aforesaid cleaning method of the prior art shows the following problems due to the fact that this is a so-called wet cleaning method in which basically water is used for cleaning operation.

[0006] 1) Although a continuous total processing within a vacuum environment such as a dry etching or a plasma CVD or the like increases a machining precision or manufacturing efficiency, cleaning operation required after each of the processings is a wet type processing, so that it generates a necessity for once putting out the wafer into atmosphere and thus the aforesaid effects may not be attained.

[0007] 2) The wet cleaning operation requires a rinsing stage and a drying stage in addition to the cleaning operation, resulting in that the number of manufacturing stages is increased.

[0008] 3) In the case of wet cleaning operation, the local surface of the semiconductor material is degraded in its quality and as the size of a semiconductor is made fine, its yield is reduced by the degraded material quality at the surface.

[0009] 4) In the case of performing the wet cleaning operation, liquid is not sufficiently immersed into the fine structural part sometimes due to a surface tension of liquid and cleaning power at the fine structural part is lack.

[0010] 5) A high performance device has required high wet-absorbing material such as organic film or porous organic film as a new material for a semiconductor device, in particular, an insulating film material in the future, and in the case of manufacturing the semiconductor device using these materials, either the wet cleaning or a mere occasional exposure in the surrounding atmosphere causes a characteristic of the device to be deteriorated.

[0011] 6) A wet cleaning is normally carried out under a batch processing. In the case that the wafer has 300 mmφ (diameter) or more, it takes much time in cleaning of the wafer and handling before and after the cleaning.

[0012] In turn, as a cleaning method in place of the aforesaid wet cleaning operation, there is provided a dry cleaning method. As to the dry cleaning method, this method has been disclosed in the gazettes of Japanese Patent Laid-Open Nos. Hei 8-131981, 8-85887 or 9-17776, for example.

SUMMARY OF THE INVENTION

[0013] It is an object of the present invention to provide a dry cleaning device capable of attaining a cleaning power corresponding to the wet processing even in cleaning within vacuum environment and cleaning vacuum state in order to solve the problems accompanied with the aforesaid wet cleaning.

[0014] A summary of the disclosed invention that is a representative one of the disclosed inventions will be described in brief as follows.

[0015] The present invention is characterized in that the particles left at the surface of the wafer are physically removed with a high-speed gas flow by a method wherein a pad is approached to the surface of the wafer, gas is injected into a clearance and a high-speed gas flow along the surface of the wafer is generated.

BRIEF DESCRIPTION OF THE DRAWINGS

[0016]FIG. 1 is a basic configuration view for showing a preferred embodiment 1 of the present invention.

[0017]FIG. 2 is an illustrative view for showing a pad in a preferred embodiment 1 of the present invention.

[0018]FIG. 3 is a view for showing a pad in a preferred embodiment 1 as seen from a wafer.

[0019]FIG. 4 is a view for showing a pad supporter from the supporter in a preferred embodiment 1.

[0020]FIG. 5 is a view for showing a scanning method of a pad on a wafer in a preferred embodiment 1.

[0021]FIG. 6 is an illustrative view for showing a method for holding a wafer in a preferred embodiment 1.

[0022]FIG. 7 is an illustrative view for showing an effect of cleaning with plasma (1 of 3).

[0023]FIG. 8 is an illustrative view for showing an effect of cleaning with plasma (2 of 3).

[0024]FIG. 9 is an illustrative view for showing an effect of cleaning with plasma (3 of 3).

[0025]FIG. 10 is an illustrative view for showing a pad in a preferred embodiment 2 of the present invention.

[0026]FIG. 11 is a view for showing a pad in a preferred embodiment 2 as seen from a wafer.

[0027]FIG. 12 is an illustrative view for showing a pad in a preferred embodiment 3 of the present invention.

[0028]FIG. 13 is a basic configuration view for showing a preferred embodiment 4 of the present invention.

[0029]FIG. 14 is an illustrative view for showing a pad in a preferred embodiment 4 of the present invention.

[0030]FIG. 15 is an arrangement configuration view for showing a wafer mounting means in a preferred embodiment 4.

[0031]FIG. 16 is an operation illustrative view for showing a wafer mounting means in a preferred embodiment 4.

[0032]FIG. 17 is a basic configuration view for showing a preferred embodiment 5 of the present invention.

[0033]FIG. 18 is an illustrative view for showing a pad in a preferred embodiment 5 of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0034] Referring now to the drawings, some preferred embodiments of the present invention will be described in detail as follows.

[0035] (Preferred Embodiment 1)

[0036] A first preferred embodiment of the present invention and its operation will be described as follows. An object to be washed here is a circular semiconductor wafer with a diameter of about 300 mmφ (diameter).

[0037] In FIG. 1 is shown a basic configuration view in a first preferred embodiment of the present invention. Within a vacuum container 1 having a vacuum evacuating means are installed a wafer mounting means 3 for mounting a wafer 2, a pad 5 and a supporting section 6. The wafer mounting means 3 is connected to a Rotating mechanism 4 for rotating the wafer 2 in a circumferential direction. The pad 5 is connected to the supporting section 6. The supporting section 6 is further connected to an actuater 7 capable of performing an up-and-down motion for changing a space between the pad 5 and the wafer 2, and capable of sliding the pad 5 on the surface of the wafer 2. A weight sensor 8 for sensing an applied load acted between the pad 5 and the wafer 2 produced by the up-and-down motion is mounted at the actuater 7 and then a space between the pad 5 and the wafer 2 can be managed. A temperature control means 19 is mounted on the wafer mounting means 3 so as to enable a temperature of the wafer 2 to be controlled within a range from a room temperature to 300° C. A plasma generating means 9 is arranged at the upper part of the vacuum container 1. In the preferred embodiment, the plasma generating means using an electromagnetic wave in a UHF band is applied. The electromagnetic wave in the UHF band passes from a UHF power supply 10 through an alignment unit 11, passes from a plane antenna 12 through a dielectric material window 13 sealingly closing the vacuum chamber and is guided into the vacuum container. In the preferred embodiment, electromagnetic wave in the UHF band is applied at the plasma generating means 9. However, the plasma generating means using an electromagnetic wave in a micro-wave band or an electromagnetic wave in a radio frequency band may be additionally applied and further a similar effect can be attained by applying a magnetic field to the plasma generating means to the plasma generating means operated under these electromagnetic waves to generate plasma. In brief, whatever type of means capable of generating plasma may be applied, any type of methods may have a similar effect. The wafer 2 is arranged within a diffusion area of plasma generated by the plasma generating means 9. Arranging the wafer 2 within the diffusion area enables excessive damage or the like caused by plasma to be prevented from being applied to the wafer 2.

[0038] Then, a washing process in the first preferred embodiment will be described as follows.

[0039] After mounting the wafer 2, inside the vacuum container 1 is vacuum evacuated by a vacuum evacuating means. Similar effect can be attained if after evacuation by vacuum, the wafer 2 is mounted in the vacuum. Then, the wafer 2 is rotated by the rotating mechanism 4 in a circumferential direction together with the wafer mounting means 3. In the case of the preferred embodiment, a rotating speed of the wafer 2 is 200 rpm. In addition, a temperature of the wafer is set to 100° C. by the temperature control mechanism 16. Increasing the temperature of the wafer 2 enables a chemical reaction efficiency at the surface of the wafer 2 to be increased and a washing efficiency to be increased. After rotation of the wafer 2, Ar gas is injected through the pad 5 at a flow rate of 20 litter/min. The pad 5 on the wafer 2 is moved to such a position as one where it may not be contacted with the wafer 2 under an oscillating motion of the actuater 7. Concurrently, plasma of mixture gas of Ar and CF4 fed through a second gas feeding means 20 separately arranged and mixture gas of Ar gas fed through the pad 5 is generated by the plasma generating means 9. After production of plasma, the pad 5 is moved near the wafer 2 through up-and-down motion of the actuater 7. At this time, a force applied between the pad 5 and the wafer 2 is detected by the weight sensor 8 so as to control a space between the surface of the pad 14 and the surface of the wafer 2. More practically, a space between the pad surface and the surface of the wafer 2 becomes a high gas pressure state with AR gas supplied through the pad 5, and even if the pad 14 is not contacted with the wafer, an applied load is generated between the pad 14 and the wafer 2, so that the applied load is detected by the weight sensor 8 and reflected against a flow rate of the flowed gas so as to enable a space between the surface of the pad 14 and the surface of the wafer 2 to be controlled. As the weight sensor 8, it can be applied that a piezo-electric element, a strain gauge, a spring, a resilient member, a weight or a combination of these members are arranged. In this way, high-speed gas flow is generated in a clearance between the pad 14 and the wafer 2 to enable some particles at the surface of the wafer 2 to be removed. In the preferred embodiment, a clearance between the surface of the pad and the surface of the wafer was controlled to have 5 to 20 μm. However, setting a range of clearance between the surface of the pad and the surface of the wafer of 1 to 100 μm may also provide a similar effect as needed. Comparing in reference to the same amount of supplied gas shows that a high-speed gas flow can be generated as a clearance between the surface of the pad and the surface of the wafer is made narrow and a higher cleaning power can be attained, so that the narrow clearance is advantageous. However, when the clearance between both elements is made narrow, it becomes difficult to keep the clearance constant and at the same time too much approached state between them may cause both of them to be highly contacted to each other and there occurs a possibility that a certain damage is inducted at the surface of the wafer.

[0040] In the preferred embodiment, Ar gas is used as gas supplied through the pad 5 and a similar effect may also be provided under additional application of gases such as nitrogen, He, Xe and Ne and the like.

[0041] In the preferred embodiment, a flow rate of gas flowing between the pad 5 and the wafer 2 has been set to 20 litter/min. However, a similar effect can be attained even under a flow rate of 0.5 to 500 litters/min. It is natural to say that although an increased amount of gas flow rate enables a cleaning power to be increased only in reference to the cleaning power and considering an increased cost caused by an increased amount of consumed gas shows that the aforesaid range of 0.5 to 500 litters/min. is a practical range.

[0042] In FIG. 5 is shown a method for scanning of the pad 5 on the wafer 2. After a clearance between the pad 5 and the wafer 2 reaches its set value, the pad 5 is swung on the wafer 2 by the actuater 7. An outer diameter of the pad 5 applied in the preferred embodiment of the present invention is smaller than that of the wafer 2. In view of this fact, an entire surface of the wafer 2 is scanned by the pad 5 under both the swing motion and the rotation of the wafer 2. In the preferred embodiment of the present invention, although the rotating mechanism 4 for use in rotating the wafer is used, additionally, a similar effect can be attained even in the case that a mechanism for rotating the pad 5 or a mechanism for rotating the wafer 2 and a mechanism for rotating the pad 5 are used together.

[0043] A wafer holding section 29 shown in FIG. 6 is mounted on the wafer mounting means 3 to hold the wafer 2. FIG. 6 shows a case that the wafer 2 is a Si wafer. The wafer holding section 29 holds the wafer 2 by pushing it from a lateral side. In order to enable the peripheral part of the wafer 2 to be cleaned, the wafer holding section 29 has no step in regard to the wafer 2 and the pad 5 can perform a scanning operation on the wafer holding section 29. In order to equalize a cleaning power at the central part of the wafer 2 and a cleaning power at its peripheral part from each other, an oscillating speed of the pad 5 or a rotating speed of the wafer 2 is made variable. For example, the rotating speed of the wafer 2 in the preferred embodiment is delay at the central part of the wafer as compared with that of the peripheral part. In view of this fact, the swing speed of the pad 5 at the central part of the wafer 2 is made faster than a swing speed at the peripheral part of the wafer 2, it is set such that a staying time of the pad 5 on the wafer 2 at the central part of wafer 2 is made equal to that at the peripheral part of the wafer 2. With such an arrangement as above, time required for washing at the central part of the wafer and time required for washing at the peripheral part of the wafer become equal to each other, resulting in that a through-put of the wafer can be improved.

[0044] Then, details near the pad 5 will be described as follows. In FIG. 2 is shown an illustration of the pad 5. The pad 5 is comprised of a pad 14 formed by Teflon material near the wafer 2; a pad supporting section 15; and a gas feeding passage 16. In FIG. 3 is shown a view as seen from a plane of the pad section 14 near the wafer. In the preferred embodiment, a plurality of gas injection ports 17 branched from a buffer 26 are arranged on a circumference at an outer peripheral part of the pad and the central part of the pad is of an annular structure. In FIG. 4 is shown a view for showing the pad supporting section 15 from the supporting section 6. The pad supporting section 15 is of a structure having windows therein, wherein gas flowed to the central section of the pad 14 can be passed into the vacuum container 1. As described above, when the pad 14 and the wafer 2 are approached to each other to improve a washing power, there occurs a possibility that both of them may contact to each other. In order to cause the pad 14 and the wafer 2 to be easily approached to each other, it is important that an angle between the pad and the wafer is controlled and adjoining planes are always kept in parallel to each other. In order to realize this arrangement, the pad supporting section 15 is connected to the supporting section 5 by the pad connecting section 18 and its connecting angle can be freely changed. This structure can be realized by a spherical surface bearing, an air damper and a resilient member or the like, for example. Further, gas flows through a gas feeding passage 16, is branched within the pad supporting section 15 and the buffer 26, the gas is injected form each of the gas injection ports 17 arranged at the peripheral section of the pad section 14, the gas feeding passage 16 has a soft structure in such a way that a connecting angle between the pad supporting section 15 and the supporting section 6 may not be fixed. With such an arrangement as above, gas pressure is increased at a place where the pad 5 is inclined to approach near the wafer 2, the pad 5 is pushed back, an inclination angle of the pad 5 in respect to the wafer 2 is automatically corrected and contact between both members is avoided.

[0045] In the preferred embodiment, although Teflon material is used at the pad section 14 of the pad 5, it is apparent that a similar effect to that described above can be attained even if polyvinyl alcohol, Delrin, Bespel, kapton, polyvinyl chloride, polyester, silicon oxide, silicon, and aluminum oxide and the like are applied. Basically, it is desirable that, as material quality of the pad section 14, more soft material quality than that at the surface of the wafer 2 is applied. If the material quality of the pad section 14 is of a resilient material having such a degree as one it can be deformed into a corrugated shape at such a gas pressure variation at a clearance between the pad section 14 and the wafer 2, deformation of the pad section 14 enables a contact between the pad section 14 and the wafer 2 from being avoided. In reference to avoidance that some particles are left at the surface of the wafer at the pad section 14, it is desirable that it is as flat as possible. In turn, the surface of the pad section 14 facing against the wafer is formed into a corrugated shape to enable turbulence flow to be generated in the gas flow and its cleaning power to be improved. It is necessary that the surface shape of the pad should be determined in reference to these effects. In the case that some particles are left at the surface of the pad section 14, either the pad section is replaced with another one or a cleaning mechanism for the surface of the pad section is installed to enable the wafer to be continuously cleaned.

[0046] A part of the particles removed away from the wafer 2 is gasified within the vacuum container 1 with plasma and evacuated. The residual particles are removed through the evacuating port together with discharged gas. In the preferred embodiment shown in FIG. 1, in order to perform an efficient removal of particles, fed gas from the second gas feeding means 20 is injected out in a shower form from dielectric windows 13 with a shower plate structure having many gas injection ports mounted therein. A gas flow from the wafer 2 to the gas discharging port is formed by the shower-like gas flow and some particles in the vacuum container 1 are efficiently transported to the discharging port. Gas fed by the second gas feeding means has two functions for forming the aforesaid plasma and for transporting the aforesaid particles. In addition it is also possible to make the most-suitable setting of the shape of the vacuum container and the position of the gas blowing-out port and to form a gas flow for performing a more efficient transportation of removed particles to the gas discharging port. Further, the inner wall surface of the vacuum container is heated to enable the particles to be prevented from being re-adhered to the inner wall surface. Additionally, a proper filter is arranged within the gas discharging passage to enable the aforesaid particles to be prevented from being mixed and discharged into the final discharging gas from the cleaning device.

[0047] Then, a cleaning mechanism will be described as follows. At first, a function of the pad 5 will be described. The pad 5 mainly performs a function for applying a physical power to the particles adsorbed at the surface of the wafer 2 to remove the particles. However, if the pad 5 is directly contacted with the surface of the wafer 2, the acting physical power is too high and certain damage is produced at the surface of the wafer. Due to this fact, in the preferred embodiment, gas is flowed between the pad 5 and the wafer 2 and a physical power is indirectly acted against the surface of the wafer 2 through the gas layer. Gas flow is generated between the pad 5 and the wafer 2, a frictional stress of the gas flow can be acted against the surface of the wafer 2 and a high substance moving power can be generated while being not contacted with it. Further, the pad 5 and the wafer 2 are approached to each other, gas is fed into a minute clearance, thereby a high-speed gas flow having a cleaning power over a wide range can be produced and the cleaning power caused by the gas flow speed is determined by a space of the clearance and a gas flow rate, so that mere controlling of the power acted between the pad 5 and the wafer 2 and a gas flow rate enables the cleaning power to be controlled more precisely. Both a low damage characteristic and a high cleaning power characteristic can be attained by this precise cleaning power control function. In addition, the aforesaid high-speed gas flow enables a cleaning power to be acted on all the portions at the surface of the fine structure formed at the surface of the wafer 2, resulting in that a high efficient physical cleaning action for the fine semiconductor structure as one in which the cleaning action is not provided due to a surface tension in the case of wet cleaning can be attained.

[0048] Then, referring now to FIGS. 7, 8 and 9, function of a plasma generating means 9 will be described. In FIGS. 7, 8 and 9, reference numeral 101 denotes plasma generated by the plasma generating means 9, reference numeral 102 denotes an ion sheath formed between the plasma 101 and the surface 105 of the wafer, reference numeral 103 denotes a suction force acted against the particle 104 present on the wafer surface 105, respectively, reference numeral 106 denotes a radical of either oxygen or ozone, reference numeral 107 denotes a chemical adsorbed portion of the particle 104 to the wafer surface 105, reference numeral 108 denotes a wafer surface before cleaning operation, and reference numeral 109 denotes a halogen radical, respectively.

[0049] Function of the generated plasma 101 shown in FIGS. 7, 8 and 9 consists in dampening an adsorbing power of particle 104 against the wafer surface 105 of which removal is difficult only through the physical cleaning action by the aforesaid pad and consists in improving a cleaning efficiency.

[0050] At first, a lift-off function shown in FIG. 7 will be described. In the preferred embodiment, mixture gas of Ar and CF4 is supplied to the plasma generating means 9 in addition to Ar gas supplied from the pad. This CF4 gas is dissociated into high reactive components (halogen radicals) 109 such as F, CF3 through generation of the plasma 101. These active components 109 etch (lift off) a quite small amount of either silicon or silicon oxide film at the surface 105 of the wafer to cause the particles 104 melted into or bitten into the surface 105 of the wafer to be easily removed and a physical cleaning power attained by the previous pad is increased. In the preferred embodiment, the dissociated component of CF4 gas has been applied as the dissociated component 109, it is apparent that a similar lift-off effect can be attained even if dissociated substances such as C2F6, C3F8, C12, F2, HF, ammonia and hydrogen gas and the like are applied.

[0051] In FIG. 8 is indicated a mechanism for dampening an adsorbing power generated by the plasma of particles 104 electrostatically adsorbed. At the surface 105 of the wafer after passing through the semiconductor manufacturing process under application of plasma such as a plasma etching or a plasma-sputtering is produced an electro-static adsorption of the particle 104 caused by a charging phenomenon. This electrostatic adsorbing power is dampened with the electric charge carried by the low-density plasma 101 generated by the plasma generating means of the present invention, and the cleaning power provided by the physical cleaning action with the pad can be increased (assisted).

[0052]FIG. 9 is a view for illustrating a mechanism for dampening an adsorbing power in the case that the particle 104 is chemically adsorbed to the surface 105 of the wafer. Normally, in the case that the particle 104 is chemically adsorbed to the surface 105 of the wafer, an oxidization reaction is generated at a contact surface between the particle 104 and the surface 105 of the wafer. That is, some electrons are received or given between the particle 104 and the surface 105 of the wafer to generate the chemical adsorbing power. In view of this fact, oxygen gas is supplied to generate plasma, resulting in that high oxidizing active component 106 such as either ozone or oxygen radicals and the like is generated, the active component 106 is adsorbed into the particle 104, thereby the aforesaid exchanging of electrons (giving or receiving) is transferred from between the particle and the surface of the wafer to between the particle and the active component, resulting in that the aforesaid chemical adsorbing power can be dampened. Further, it is apparent to say that a similar effect can be attained by applying either nitrogen or hydrogen in place of the aforesaid oxygen or mixture gas of these oxidizing and reducing gases including the aforesaid oxygen. In addition, since the particles adsorbed onto the wafer are adsorbed in various forms, it is apparent to say that each of the cleaning auxiliary actions indicated in FIGS. 7, 8 and 9 is not independently applied, but applied in merged state to enable some particles to be removed from it.

[0053] Some problems found in the aforesaid wet cleaning method can be solved due to the fact that a high efficient cleaning of the wafer can be carried out in a vacuum region by a physical action with the aforesaid pad, and both a chemical action and an electrical action with plasma. In particular, a cleaning effect can be effectively realized against the fine structure and it becomes possible to manufacture a semiconductor device at a low cost and under a high yield by a method wherein a dry cleaning method of the present invention is applied in the manufacturing of the semiconductor device having a fine structure with a size of less than 0.2 μm.

[0054] In the aforesaid preferred embodiment, there has been described a preferred embodiment in which a physical cleaning action caused by the pad 5 is assisted by reactive characteristic of plasma, although a similar chemical action can be attained also by applying a light source of ultraviolet rays in place of the plasma generating means 9 and exciting the reactive gas fed into the vacuum state with ultraviolet rays fed from the light source as another preferred embodiment and the physical cleaning action with the pad 5 can be assisted. In addition, another preferred embodiment of the present invention, fluoric acid vapor or mixture gas of fluoric acid and water vapor is used in place of plasma, the lift-off function of the silicon or silicon oxide film can be realized and the physical cleaning action with the pad 5 can be assisted. In addition, the cleaning capability can also be increased by applying an ultraviolet wave to either the wafer 2 or the pad 5. Further, it is also possible to clean both front and rear surfaces of the wafer by re-arranging the wafer in inside-out state.

[0055] (Preferred Embodiment 2)

[0056] It has been described above that it is important to control an inclination angle between the pad 5 and the wafer 2. In the preferred embodiment 2, an example of configuration of the pad is indicated in which an inclination angle management between both members can be carried out by applying a plurality of gas feeding passages in a plurality of systems of which flow rates can be controlled independently. In FIG. 10 is indicated a configuration of the pad applied in the preferred embodiment. The pad has three gas feeding passages 16 a, 16 b, 16 c in three systems of which gas flow rate can be controlled independently. Each of the gas feeding passages is branched into a plurality of gas injection ports 17 by buffers 26 a arranged in the pad 14 a and reaches into a clearance between the pad 14 a and the wafer 2. In FIG. 11 is shown a view for showing the pad 14 a from the side of the wafer. The buffers 26 a are divided into three segments in correspondence with the gas flow passages in the aforesaid three systems. Each of the flow rates of gas flowing in the three gas flow passages in three systems is controlled and an inclination angle of the pad 14 a in respect to the wafer 2 (an angle formed by a major plane of the pad and a major plane of the wafer) can be controlled. In the example of the present configuration, a plurality of distance sensing electrodes 27 are embedded in the pad 14 a, an electrostatic capacitance among them and the wafer is measured to measure a distance between the pad 14 a and the wafer 2. The distance is reflected against the aforesaid gas flow rate to amend an inclination angle of the pad 14 a in respect to the wafer 2. This correction of the inclination angle can be realized under control of applying a piezo-electric element, a spring and a resilient member and the like in place of the aforesaid gas flow rate control.

[0057] (Preferred Embodiment 3)

[0058] In the preferred embodiment 3, a pad is constructed such that a distance between the pad 14 and the wafer 2 is directly measured and the pad 14 is moved in reference to the measured value to control an inclination angle between both members. Other portions are similar to those of the preferred embodiment 1.

[0059] In FIG. 12 is illustrated an example of configuration of the pad in the preferred embodiment. A distance between the pad 14 and the wafer 2 is directly measured in a precise manner by elongation or shrinkage of a space control section 32 comprised of a piezo-electric element and controlled. A space control performed by the space control section 32 is carried out by a method wherein the pad 14 is approached to the wafer 2 by the actuater 7 and an up-and-down motion of it under an operation of the actuater 7. A space between the pad 14 and the wafer 2 is measured after embedding and mounting the distance sensing electrodes 27 in the pad 14. A plurality of distance sensing electrodes 27 are mounted on a circumferential part in the same manner as that of the preferred embodiment 2, and an inclination angle of the pad 14 in respect to the wafer 2 may also be measured. In order to correct the inclination angle, an inclination correction mechanism 28 using the piezo-electric element is applied. A plurality of inclination correcting mechanisms 28 are mounted on the circumference in the same manner as that of the distance sensing electrodes 27 and an inclination of the pad 14 can be mechanically corrected in response to their elongation and shrinkage. Although in the present example of configuration, a piezo-electric element is used in the space control section 32 and the inclination correction mechanisms 28, a similar effect may also be attained by employing another elongating or shrinking mechanism such as an air cylinder or the like.

[0060] (Preferred Embodiment 4)

[0061] A fourth preferred embodiment of the present invention and its operation will be described as follows. In the preferred embodiment, the pads 5 used in the preferred embodiment 1 are mounted on both upper surface and lower surface of the same positions of the wafer 2 to enable both upper surface and lower surface to be cleaned concurrently.

[0062] In FIG. 13 is shown a basic configuration view for showing a dry cleaning device in the preferred embodiment 4, and in FIG. 14 is shown a detailed configuration view for showing a part near the pad in the preferred embodiment 4, respectively.

[0063] Within the vacuum container 1 having a vacuum evacuating means are arranged a wafer mounting means 21 for mounting a wafer 2; a pad 5 a mounted on the upper surface of the wafer; a pad 5 b mounted on the lower surface of the wafer; supporting sections 6 a, 6 b; and oscillating shafts 22 a, 22 b. The pad 5 a mounted on the upper surface of the wafer 2 is connected to the oscillating shaft 22 a through the supporting section 6 a. The pad 5 b mounted on the lower surface of the wafer in upside-down state is connected to the oscillating shaft 22 b through the supporting section 6 b. An actuater 23 can control a relative distance between the oscillating shafts 22 a, 22 b while moving up and down in a relative manner and push them to each other. A pushing force applied between the oscillating shafts 22 a, 22 b is detected by an weight sensor 24. Further, the actuater 23 enables the swing shafts 22 a, 22 b integrally to perform an oscillating motion in a concurrent manner. As the pads 5 a, 5 b, the same material as that of the pad in the preferred embodiment 1 is applied. In addition, the plasma generating means 9 using the electromagnetic wave of the same UHF band as that of the preferred embodiment 1 is mounted at the upper part of the vacuum container 1. In addition, as means for heating the wafer 2, there has been mounted means for radiating infrared rays through windows permeating the infrared rays from the light source out of infrared rays range against the wafer 2 to heat it.

[0064] Then, details of the wafer mounting method will be described. In the preferred embodiment, in order to concurrently clean both upper surface and lower surface of the wafer 2, it is required to provide a mounting method in which both upper and lower surfaces of the wafer 2 are not contacted with other pads other than the pads 5 a, 5 b as much as possible. In FIG. 15 is shown an arrangement configuration view of the wafer mounting means 21 as seen from above the wafer 2. Four wafer mounting means 21 are arranged at positions at an outer circumference of the wafer 2 where they may not interfere with the oscillating motions of the pads 5 a, 5 b. Each of the four wafer mounting means 21 oscillates to cause the wafer 2 to push inwardly and to fix the wafer 2. As shown in FIG. 16, the wafer mounting means 21 is provided with a wafer holding section 25 having frustums of circular cone oppositely faced in upside-down and overlapped to each other, and a wafer 2 can be held at the inward notched locations. In addition, the wafer holding section 25 can freely move up and down by a small amount and it can be aligned with the height of the wafer 2 which is determined while being held by the pads 5 a, 5 b. Further, rotating the wafer holding section 25 enables the wafer 2 itself to be rotated. In addition, even if the orientation of the wafer 2 held is changed, a similar effect can be attained. For example, the wafer 2 can be held in a vertical orientation.

[0065] A cleaning step in the preferred embodiment 4 is basically similar to that of the previous preferred embodiment 1. In this case, there will be described a method for accessing the pad substantially different from that of the preferred embodiment 4 to the wafer. After the wafer 2 is mounted by the wafer mounting means 21, inside part of the vacuum container 1 is vacuum evacuated by a vacuum evacuating means. Even if the wafer 2 is mounted in the vacuum state after the vacuum evacuation is performed, a similar effect can be attained. Then, the wafer holding section 25 of the wafer mounting means 21 is rotated to cause the wafer 2 to be rotated. After rotation of the wafer 2, the oscillating shafts 22 a, 22 b are integrally rotated to cause the pads 5 a, 5 b to be moved to a position equal spaced apart from the wafer 2 above and below the wafer 2. At this time, the pads 5 a, 5 b are sufficiently spaced apart from the wafer or the wafer mounting means in such a way that the pads 5 a, 5 b may not strike against the wafer 2 or the wafer mounting means 21. After the pads 5 a, 5 b are moved above and below the wafer 2, plasma is generated above the wafer 2 by the plasma generating means 9 and concurrently the pads 5 a, 5 b are pushed to each other with an inter-face distance between each of the pads 5 a, 5 b being narrowed while the pads 5 a, 5 b being approached to the surface of the wafer 2. Since the wafer holding section 25 can be moved up and down by a minimum amount, the wafer 2 is moved to the position where pressures of gas in a clearance between each of the pads 5 a, 5 b become equal to each other. In the preferred embodiment, a flow rate of gas injected from the pad 5 a and a flow rate of gas injected from the pad 5 b are equal to each other, so that the wafer 2 moves to the position where it has an equal distance against each of the pads 5 a, 5 b. If the pressing forces of the pads 5 a, 5 b to each other are detected by an applied weight sensing means 24 and controlled by the actuater 23, a distance between the pad and the wafer can be managed. If the gas flow rates of gas injected from each of the pads 5 a, 5 b are made different from each other, it is possible to make the distances between each of the pads and the wafer 2 different from each other. As described above, the pads 5 a, 5 b are integrally oscillated on the surface of the wafer 2 in a concurrent manner by the oscillating motion of the actuater 23 while the distance between the wafer 2 and each of the pads 5 a, 5 b is being controlled constant. Under the oscillating motion and the rotating motion of the wafer, the pad 5 a scans on the entire upper surface of the wafer 2 and the pad 5 b scans on the entire rear surface of the wafer, respectively.

[0066] In the preferred embodiment, although the pads having the same structure are used at the upper surface side and the lower surface side of the wafer 2, a similar effect can be attained if the pads having different structures to each other are used. In addition, although the plasma generated by the plasma generating means 9 is generated only above the wafer 2 in the preferred embodiment, it is also possible to arrange the plasma generating means 9 below the wafer in accordance with the type of particle left at the lower surface of the wafer 2. Further, it is possible to clean the surface of each of the pads 5 a, 5 b to be approached to the surface of the wafer 2 by approaching the pads 5 a, 5 b to each other while gas is being injected from the gas injection port 17 under a state in which the wafer 2 is not present.

[0067] (Preferred Embodiment 5)

[0068] In FIG. 17 is shown an illustration of the preferred embodiment 5 and in FIG. 18 is shown an illustration of the pads in the preferred embodiment. The preferred embodiment 5 shows a device for cleaning both front and rear surfaces of the wafer 2 concurrently in the same manner as that of the previous embodiment 4, wherein the plasma generating means having the same configuration to each other are arranged at both above and below the wafer 2, and the cleaning effect under the aforesaid plasma is generated not only at the front surface of the wafer 2, but also the rear surface of the wafer 2. Further, the pad for cleaning the lower surface of the wafer 2 is provided with a brush 30 comprised of many fur-like structures. In the case that the pads are pushed against the wafer 2 from its both front surface side and rear surface side, the wafer 2 can not be kept at a specified position unless both surface sides are pushed together with an equal force. In view of the foregoing, in the preferred embodiment, a mechanism for performing a mechanical cleaning with the brush 30 is applied at the rear surface while the pushing forces from both front and rear surfaces of the wafer at the pads 14 are being balanced. Further, a plasma shield 31 is mounted to prevent influence of plasma against the pads. The pads are separated from plasma by this plasma shield 31 and thus it is possible to prevent material quality from being damaged or particles from being generated. In addition, in order to prevent the particles separated from the wafer 2 from being adhered again to the inner wall surface of the container 1, a wall surface temperature control means 33 is mounted to control a temperature of the inner wall surface of the container 1 to 200° C. As to other structural portions, they are similar to those of the preferred embodiment 4. In accordance with the preferred embodiment 5, it becomes possible to reinforce the cleaning capability at the rear surface of the wafer 2.

[0069] [Effects of the Invention]

[0070] In the preferred embodiments disclosed in the present invention, their effects which can be attained by the representing embodiment are described briefly as follows.

[0071] Applying the dry cleaning technology of the present invention enables the semiconductor device having a ultra-fine structure of about 0.1 μm to be manufactured in a low cost and in a precise manner. 

What is claimed is: 1) A dry cleaning apparatus, wherein: a container having a vacuum evacuating means includes: a wafer mounting means; one or a plurality of pads arranged near the surface of the wafer; means for supplying gas in a clearance between said pad and said wafer from one or a plurality of gas injection ports arranged in said pad; means for controlling a space between said pad and said wafer; and means for relatively moving said pad and said wafer, and wherein: particles at the surface of the wafer are removed. 2) A dry cleaning apparatus according to claim 1, wherein: there is provided a second gas supplying means for injecting gas from another gas injection port or a plurality of gas injection ports separate from the gas supplying means arranged in said pad into the container. 3) A dry cleaning apparatus according to claim 1, wherein: plasma is generated in said container. 4) A dry cleaning apparatus according to claim 1, wherein: means for controlling a clearance between said pad and the wafer is means for controlling a flow rate of gas supplied in a clearance between said pad and said wafer and a force where said pad and said wafer relatively push to each other to control said clearance. 5) A dry cleaning method in the dry cleaning apparatus according to claim 4, wherein: a force where said pad and said wafer push to each other is measured by a piezo-electric element, a spring, a resilient member, a strain gauge, a weight or these combinations. 6) A dry cleaning apparatus according to claim 1, wherein: means for controlling a clearance between said pad and said wafer is comprised of a mechanism for relatively approaching either said pad or said wafer by any of a piezo-electric element, an air cylinder and a motor, and of means for measuring a distance between said pad and said wafer. 7) A dry cleaning apparatus according to claim 1, wherein: an electrostatic capacitance is detected to measure a clearance between said pad and said wafer. 8) A dry cleaning apparatus according to claim 1, wherein: an angle formed by a major plane of said pad and by a major plane of said wafer can be varied by a gas pressure present in a clearance between said pad and said wafer. 9) A dry cleaning apparatus according to claim 8, wherein: there is provided means for controlling an angle formed by a major plane of said pad and by a major plane of said wafer with a piezo-electric element, a damper, a spring, a resilient member or their combination. 10) A dry cleaning apparatus according to claim 1, wherein: means for supplying gas into a clearance between said pad and said wafer is comprised of a gas injection port at the central part of said pad. 11) A dry cleaning apparatus according to claim 1, wherein: means for supplying gas into a clearance between said pad and said wafer is comprised of a structure in which a plurality of gas injection ports are arranged at a peripheral part of said pad. 12) A dry cleaning apparatus according to claim 1, wherein: means for supplying gas into a clearance between said pad and said wafer is means for supplying gas with a plurality of gas supplying passages capable of independently controlling a gas flow rate. 13) A dry cleaning apparatus according to claim 1, wherein: said pad has a gas discharging port for discharging gas present in a clearance between said pad and said wafer. 14) A dry cleaning apparatus according to claim 1, wherein: an outer shape of said pad is smaller than that of said wafer. 15) A dry cleaning apparatus according to claim 1, wherein: the material at a plane of said pad near said wafer has a lower hardness than that of said wafer. 16) A dry cleaning apparatus according to claim 1, wherein: the material at a plane of said pad near said wafer can be deformed into a corrugated shape by a pressure of gas present in a clearance between said pad and said wafer. 17) A dry cleaning apparatus according to claim 1, wherein: the material at a plane of said pad near said wafer is comprised of one or a combination of Teflon, polyvinyl alcohol, Delrin, Bespel, kapton, polyvinyl-chloride, polyester, silicon oxide, silicon, aluminum oxide and the like. 18) A dry cleaning apparatus according to claim 1, wherein: the plane of said pad near said wafer is flat and smooth. 19) A dry cleaning apparatus according to claim 1, wherein: the plane of said pad near said wafer other than the gas injection port is deformed into a corrugated shape and its surface is smooth. 20) A dry cleaning apparatus according to claim 1, wherein: the material at a plane of said pad near said wafer is porous. 21) A dry cleaning apparatus according to claim 1, wherein: the part of said pad near said wafer can be easily exchanged. 22) A dry cleaning apparatus according to claim 1, wherein: there is provided a mechanism for cleaning the plane of said pad near said wafer. 23) A dry cleaning apparatus according to claim 1, wherein: means for relatively moving said pad and said wafer is comprised of means for scanning said pad on the surface of the wafer and means for rotating the wafer on the plane. 24) A dry cleaning apparatus according to claim 1, wherein: the outer circumference of said wafer has a second pad having a surface at the same height as that of the surface of the wafer, and means for relatively moving said pad and said wafer is means for scanning said pad on both said wafer and second pad. 25) A dry cleaning apparatus according to claim 1, wherein: means for relatively moving said pad and said wafer is means of which moving speed is changed in response to a relative position between said pad and said wafer. 26) A dry cleaning apparatus according to claim 1, wherein: said wafer mounting means is not projected out more to said pad than said wafer. 27) A dry cleaning apparatus according to claim 1, wherein: said wafer mounting means is constructed such that it holds said wafer from the surface of said wafer and is not contacted with the upper surface and the lower surface of said wafer except a region less than 3 mm from a peripheral part. 28) A dry cleaning apparatus according to claim 1, wherein: ultrasonic wave is applied to either said wafer or said pad. 29) A dry cleaning apparatus according to claim 1, wherein: there is provided means for controlling a temperature of said wafer. 30) A dry cleaning apparatus according to claim 1, wherein: there is provided means for controlling either a part or all the inner wall of said container. 31) A dry cleaning apparatus according to claim 3, wherein: a shield for preventing influence from plasma is mounted in said pad. 32) A dry cleaning apparatus according to claim 1, wherein: there is provided means for mounting said pad mounted on said wafer mounting means in inside-out state and again mounting it to said wafer mounting means and particles at the front surface and the rear surface of said wafer are removed. 33) A dry cleaning apparatus according to claim 1, wherein: the particles at the front surface and the rear surface of said wafer are concurrently removed. 34) A dry cleaning apparatus according to claim 1, wherein: each of said pads is arranged at the front surface and the rear surface of said wafer and the particles at the front surface and the rear surface of said wafer are removed concurrently. 35) A dry cleaning apparatus according to claim 34, wherein: said pads arranged at the front surface and the rear surface of said wafer are arranged at the front surface and the rear surface at the same positions on said wafer, there is provided means for moving said two pads as a unit relatively in respect to said wafer and the particles at the front surface and the rear surface of said wafer are removed concurrently. 36) A dry cleaning apparatus according to claim 34 or claim 35, wherein: said pad arranged at the front surface-of said wafer and said pad arranged at the rear surface of said wafer are pushed to each other. 37) A dry cleaning apparatus according to claim 3, wherein: said plasma is formed by an electromagnetic wave in any one of frequency bands such as a micro-wave band, UHF band and radio frequency wave band. 38) A dry cleaning apparatus according to claim 37, wherein: said plasma applies a magnetic field to said electromagnetic wave and is formed. 39) A dry cleaning apparatus according to claim 3, wherein: said wafer is mounted in a diffusion area of said plasma. 